Morphology Control in As-Grown GaN Nanoporous Particles
| العنوان: | Morphology Control in As-Grown GaN Nanoporous Particles |
|---|---|
| المؤلفون: | Joan J. Carvajal, J. Carlos Rojo |
| المصدر: | Crystal Growth & Design. 9:320-326 |
| بيانات النشر: | American Chemical Society (ACS), 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Coalescence (physics), Fabrication, Materials science, Nanoporous, Nanotechnology, Crystal growth, General Chemistry, Condensed Matter Physics, Electrical contacts, Volumetric flow rate, Chemical engineering, Perpendicular, General Materials Science, Porosity |
| الوصف: | The influence of different parameters, such as temperature, flow rate of NH3, and pressure, in the crystal growth process of GaN micron-size nanoporous particles through the direct reaction of Ga and NH3 has been studied. Temperature influences porosity and the coalescence of the individual pores. Flow rate of NH3 influences the degree of nanoporosity of the particles. Pressure is the main parameter controlling the external shape of the particles by modulation of the crystal growth rate along or perpendicular to the c crystallographic direction. It also seems to play a role in controlling the size of the pores that can be obtained. Programmed and controlled changes in pressure during the growth experiment resulted in interesting nanoporous structures with benefits for extraction of light and fabrication of electrical contacts on these particles. |
| تدمد: | 1528-7505 1528-7483 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::838e49d8c9b9d96c4298428219e70df7 https://doi.org/10.1021/cg800498y |
| رقم الأكسشن: | edsair.doi...........838e49d8c9b9d96c4298428219e70df7 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 15287505 15287483 |
|---|