Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
العنوان: | Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization |
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المؤلفون: | B. L. Vaandrager, R. F. Pinizzotto, H. W. Lam |
المصدر: | Applied Physics Letters. 40:388-390 |
بيانات النشر: | AIP Publishing, 1982. |
سنة النشر: | 1982 |
مصطلحات موضوعية: | Zone melting, Materials science, Physics and Astronomy (miscellaneous), Silicon, Metallurgy, Oxide, chemistry.chemical_element, Recrystallization (metallurgy), Crystallographic defect, chemistry.chemical_compound, chemistry, Grain boundary, Graphite, Dislocation |
الوصف: | A detailed microstructural analysis of laterally seeded silicon‐on‐oxide formed by scanning graphite strip heater recrystallization is presented for the first time. The recrystallized top silicon layer has a (100) orientation, but contains many subgrain boundaries formed by dislocation coalescence. The subgrains are misoriented by |
تدمد: | 1077-3118 0003-6951 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::84160818bd5bbfcba36d1981dc11c7db https://doi.org/10.1063/1.93112 |
رقم الأكسشن: | edsair.doi...........84160818bd5bbfcba36d1981dc11c7db |
قاعدة البيانات: | OpenAIRE |
تدمد: | 10773118 00036951 |
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