Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
| العنوان: | Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization |
|---|---|
| المؤلفون: | B. L. Vaandrager, R. F. Pinizzotto, H. W. Lam |
| المصدر: | Applied Physics Letters. 40:388-390 |
| بيانات النشر: | AIP Publishing, 1982. |
| سنة النشر: | 1982 |
| مصطلحات موضوعية: | Zone melting, Materials science, Physics and Astronomy (miscellaneous), Silicon, Metallurgy, Oxide, chemistry.chemical_element, Recrystallization (metallurgy), Crystallographic defect, chemistry.chemical_compound, chemistry, Grain boundary, Graphite, Dislocation |
| الوصف: | A detailed microstructural analysis of laterally seeded silicon‐on‐oxide formed by scanning graphite strip heater recrystallization is presented for the first time. The recrystallized top silicon layer has a (100) orientation, but contains many subgrain boundaries formed by dislocation coalescence. The subgrains are misoriented by |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::84160818bd5bbfcba36d1981dc11c7db https://doi.org/10.1063/1.93112 |
| رقم الأكسشن: | edsair.doi...........84160818bd5bbfcba36d1981dc11c7db |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
|---|