Electrical characteristics of metal/semiconductor nanocontacts using light emission in a scanning tunneling microscope
| العنوان: | Electrical characteristics of metal/semiconductor nanocontacts using light emission in a scanning tunneling microscope |
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| المؤلفون: | P. Gerard, C. Maurel, J. Beauvillain, Roland Coratger, F. Ajustron |
| المصدر: | Journal of Applied Physics. 94:1979-1982 |
| بيانات النشر: | AIP Publishing, 2003. |
| سنة النشر: | 2003 |
| مصطلحات موضوعية: | Materials science, business.industry, Scanning tunneling spectroscopy, General Physics and Astronomy, Spin polarized scanning tunneling microscopy, Conductive atomic force microscopy, Electrochemical scanning tunneling microscope, law.invention, Optics, Semiconductor, law, Optoelectronics, Light emission, Scanning tunneling microscope, business, Quantum tunnelling |
| الوصف: | Light emission from the tunneling junction of a scanning tunneling microscope (STM) has been used to obtain the electrical characteristics of small three-dimensional gold islands deposited on flat MoS2 surfaces. It is shown that these nanocontacts behave as poor rectifying junctions whose properties are altered by leakage currents. These properties are similar to those generally observed on point contacts where a sharp STM tip is brought in contact with a semiconductor. |
| تدمد: | 1089-7550 0021-8979 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::853cb66084fe69c65f76f377717b9adc https://doi.org/10.1063/1.1591056 |
| رقم الأكسشن: | edsair.doi...........853cb66084fe69c65f76f377717b9adc |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10897550 00218979 |
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