Diode-Pumped Yb:S-FAP Thin-Disk Laser Operating at 985 nm and the Second-Harmonic Generation at 492.5 nm

التفاصيل البيبلوغرافية
العنوان: Diode-Pumped Yb:S-FAP Thin-Disk Laser Operating at 985 nm and the Second-Harmonic Generation at 492.5 nm
المؤلفون: Jing Zhang, Pei Zhai, Jing Xia, Xihong Fu
المصدر: Journal of Russian Laser Research. 37:411-415
بيانات النشر: Springer Science and Business Media LLC, 2016.
سنة النشر: 2016
مصطلحات موضوعية: Materials science, Laser diode, business.industry, Second-harmonic generation, 02 engineering and technology, 021001 nanoscience & nanotechnology, Laser, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, 010309 optics, Crystal, Optics, Thin disk, law, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, BIBO stability, Engineering (miscellaneous), Diode
الوصف: We report a diode-pumped continuous-wave (CW) thin-disk Yb3+-doped Sr5(PO4)3F (Yb:S-FAP) laser operating at 985 nm. We achieve a power of 4.34 W at 980 nm in the CW operation regime with a fiber-coupled laser diode emitting 17.2 W at 914 nm. Furthermore, we demonstrate intracavity second-harmonic generation in the continuous-wave mode with a power of 893 mW at 492.5 nm using a BiB3O6 (BiBO) nonlinear crystal. The fluctuation of the blue output power was better than 3.57%. The M2 factors are about 1.15 and 1.18 in the X and Y directions, respectively.
تدمد: 1573-8760
1071-2836
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::85b2610e7ce9ac07a3d67c6355348783
https://doi.org/10.1007/s10946-016-9590-8
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........85b2610e7ce9ac07a3d67c6355348783
قاعدة البيانات: OpenAIRE