One-step growth of centimeter-scale doped multilayer MoS2 films by pulsed laser-induced synthesis
| العنوان: | One-step growth of centimeter-scale doped multilayer MoS2 films by pulsed laser-induced synthesis |
|---|---|
| المؤلفون: | Ren Tingting, Jichang Lu, Guo Zhenyu, Jin Wen, Wang Wenzhao, Hu Yishuo, Yonghong Xiao, Yirong Zeng, Shibo Wang, Xiangbin Zeng, Yang Zeng |
| المصدر: | Journal of Materials Chemistry C. 8:6900-6905 |
| بيانات النشر: | Royal Society of Chemistry (RSC), 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | Materials science, business.industry, Doping, One-Step, General Chemistry, Substrate (electronics), Semiconductor, Transition metal, Materials Chemistry, Optoelectronics, Surface modification, Field-effect transistor, Thin film, business |
| الوصف: | Recently, two-dimensional MoS2 has attracted interest for applications in electronics, optics, energy storage, and catalysis. Furthermore, n-type or p-type doping of MoS2 can result in improved film properties, thereby expanding the range of applicability. However, the rapid preparation of large-scale MoS2 films and the effective doping of such films remain challenging. Herein, we report on a one-step growth method called pulsed laser-induced synthesis (PLIS) that can resolve these challenges and can quickly (5–10 min) prepare centimeter-scale MoS2 films directly and selectively on a substrate. A continuous length of up to 1.412 cm can be achieved with MoS2 films prepared by the described methods. Moreover, in situ doping of noble metals (Au, Pt, and Pd) to convert MoS2 into a p-type semiconductor was realized, consistent with the results obtained from first-principles calculations. The STEM images reveal that the phenomena of surface modification and cation substitution occur in the doped MoS2 films. The doped MoS2 films were further processed into a p-type field effect transistor with an on/off ratio of 105. Importantly, this technique can be applied to other transition metal dichalcogenides (TMDCs) while employing various doping elements; this scheme provides an innovative method for upscaling production and large-area doping of TMDC thin films. |
| تدمد: | 2050-7534 2050-7526 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::8644053990b6686f7bbc57c34a7fd2e9 https://doi.org/10.1039/c9tc06908a |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........8644053990b6686f7bbc57c34a7fd2e9 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20507534 20507526 |
|---|