Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam
| العنوان: | Angular Dependences of Silicon Sputtering by Gallium Focused Ion Beam |
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| المؤلفون: | A. B. Churilov, A. S. Rudy, D. E. Pukhov, M. A. Smirnova, S. G. Simakin, I. V. Zhuravlev, V. I. Bachurin |
| المصدر: | Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:784-790 |
| بيانات النشر: | Pleiades Publishing Ltd, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Auger electron spectroscopy, Materials science, Silicon, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Focused ion beam, Surfaces, Coatings and Films, Secondary ion mass spectrometry, chemistry, Sputtering, 0103 physical sciences, Surface layer, Gallium, Thin film, 0210 nano-technology |
| الوصف: | Angular dependences of the surface layer composition and the sputtering yield of silicon upon irradiation of the surface with a focused beam of gallium ions with an energy of 30 keV are obtained. The surface composition is analyzed by scanning Auger electron spectroscopy (SAES) and secondary ion mass spectrometry (SIMS). The sputtering yields are determined by measuring the volume of sputtering craters and irradiation doses. It is found that the content of gallium in the surface layer is about 30 at % with incidence angles close to the normal. With incidence angles greater than 30°, the concentration of gallium decreases quite sharply. The angular dependence of the sputtering yield of silicon does not correlate with the content of gallium in the surface layer and is rather well described by the cascade sputtering mechanism proposed by P. Sigmund. |
| تدمد: | 1819-7094 1027-4510 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::86abca5c6b897e8c33d7ecc8c4d7a891 https://doi.org/10.1134/s1027451020040229 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........86abca5c6b897e8c33d7ecc8c4d7a891 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 18197094 10274510 |
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