Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

التفاصيل البيبلوغرافية
العنوان: Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography
المؤلفون: H. S. Chen, Haiqiang Jia, Gen Yue, Yu Lei, Junhui Die
المصدر: Chinese Physics Letters. 35:054207
بيانات النشر: IOP Publishing, 2018.
سنة النشر: 2018
مصطلحات موضوعية: Materials science, Fabrication, business.industry, Scanning electron microscope, General Physics and Astronomy, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 010309 optics, Light intensity, Interference (communication), 0103 physical sciences, Nano, Microscopy, Optoelectronics, Wafer, Laser beam quality, 0210 nano-technology, business
الوصف: We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm, and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
تدمد: 1741-3540
0256-307X
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::86f74798b3e8574bfa13f18e758179bf
https://doi.org/10.1088/0256-307x/35/5/054207
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........86f74798b3e8574bfa13f18e758179bf
قاعدة البيانات: OpenAIRE