Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
| العنوان: | Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget |
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| المؤلفون: | Si Joon Kim, Antonio T. Lucero, Dushyant Narayan, Joy S. Lee, Chadwin D. Young, Scott R. Summerfelt, Jiyoung Kim, Tamer San, Luigi Colombo, Jaidah Mohan, Jaebeom Lee, Jae-Gil Lee, Young-Chul Byun, Harrison Sejoon Kim |
| المصدر: | Applied Physics Letters. 111:242901 |
| بيانات النشر: | AIP Publishing, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), Annealing (metallurgy), Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, law.invention, Atomic layer deposition, chemistry, law, 0103 physical sciences, Orthorhombic crystal system, Crystallization, Thin film, 0210 nano-technology, Tin, Monoclinic crystal system |
| الوصف: | We report on atomic layer deposited Hf0.5Zr0.5O2 (HZO)-based capacitors which exhibit excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm2) and a low FE saturation voltage (∼1.5 V) as extracted from pulse write/read measurements. The large FE polarization in HZO is achieved by the formation of a non-centrosymmetric orthorhombic phase, which is enabled by the TiN top electrode (TE) having a thickness of at least 90 nm. The TiN films are deposited at room temperature and annealed at 400 °C in an inert environment for at least 1 min in a rapid thermal annealing system. The room-temperature deposited TiN TE acts as a tensile stressor on the HZO film during the annealing process. The stress-inducing TiN TE is shown to inhibit the formation of the monoclinic phase during HZO crystallization, forming an orthorhombic phase that generates a large FE polarization, even at low process temperatures. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::88f0ddc7ec550054cb63e676531bffd2 https://doi.org/10.1063/1.4995619 |
| رقم الأكسشن: | edsair.doi...........88f0ddc7ec550054cb63e676531bffd2 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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