Thin films of boron nitride (BN) have been deposited on silicon and indium phosphide (InP) substrates at low temperature (≈ 300 °C) using a microwave plasma CVD system. The source material is molten borane-dimethylamine. The vapour was decomposed in a microwave nitrogen and argon plasma. The index of refraction and the thickness of the films have been determined by ellipsometry. FTIR spectroscopy was used for a fast phase identification. The composition was analyzed by X-ray photoelectron spectroscopy (XPS). The electrical properties of the films were evaluated by capacitance-voltage (C-V) measurements of metal/BN/semiconductor (MIS) structures. From these results a minimum interface state density of 3.5 1011 cm−2 eV−1 and a dielectric constant of 5.2 have been deduced.
