High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm
| العنوان: | High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm |
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| المؤلفون: | Maxim A. Ladugin, V. A. Strelets, Nikita A. Pikhtin, D. A. Veselov, N. A. Volkov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A A Padalitsa, V. N. Svetogorov, K. V. Bakhvalov, A. V. Lyutetskii, Sergey O. Slipchenko |
| المصدر: | Quantum Electronics. 51:909-911 |
| بيانات النشر: | IOP Publishing, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Range (particle radiation), Materials science, business.industry, Statistical and Nonlinear Physics, Heterojunction, Optical power, Laser, Waveguide (optics), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor laser theory, law.invention, Wavelength, law, Optoelectronics, Electrical and Electronic Engineering, business, Quantum well |
| الوصف: | High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9 – 2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0% – 2.5%. The operation of a laser with an ultra-narrow waveguide at wavelengths increasing from 1.4 – 1.6 to 2.0 μm is studied. At room temperature, the semiconductor lasers with a stripe contact width of 100 μm demonstrates a cw output optical power of 1.0 W with a wavelength of 1.91 μm at a pump current of 6.5 A and with a wavelength of 1.98 μm at a pump current of 7.2 A. |
| تدمد: | 1468-4799 1063-7818 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::8f641b30f79c88f28bef87b7f192a1b4 https://doi.org/10.1070/qel17635 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........8f641b30f79c88f28bef87b7f192a1b4 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 14684799 10637818 |
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