التفاصيل البيبلوغرافية
العنوان: |
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application |
المؤلفون: |
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong |
المصدر: |
Solid-State Electronics. 199:108512 |
بيانات النشر: |
Elsevier BV, 2023. |
سنة النشر: |
2023 |
مصطلحات موضوعية: |
Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
تدمد: |
0038-1101 |
URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848 https://doi.org/10.1016/j.sse.2022.108512 |
حقوق: |
CLOSED |
رقم الأكسشن: |
edsair.doi...........9080e67d663ab8098c988e921925f848 |
قاعدة البيانات: |
OpenAIRE |