التفاصيل البيبلوغرافية
| العنوان: |
Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application |
| المؤلفون: |
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong |
| المصدر: |
Solid-State Electronics. 199:108512 |
| بيانات النشر: |
Elsevier BV, 2023. |
| سنة النشر: |
2023 |
| مصطلحات موضوعية: |
Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| تدمد: |
0038-1101 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848
https://doi.org/10.1016/j.sse.2022.108512 |
| حقوق: |
CLOSED |
| رقم الأكسشن: |
edsair.doi...........9080e67d663ab8098c988e921925f848 |
| قاعدة البيانات: |
OpenAIRE |
