Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors
| العنوان: | Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors |
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| المؤلفون: | Sou Gow Wuu, Kou Chin Huang, Chii Wen Cheng, Yean-Kuen Fang, Kan Yuan Lee, Mong-Song Liang |
| المصدر: | Japanese Journal of Applied Physics. 36:1025 |
| بيانات النشر: | IOP Publishing, 1997. |
| سنة النشر: | 1997 |
| مصطلحات موضوعية: | Materials science, Hydrogen, Passivation, business.industry, Polysilicon depletion effect, General Engineering, Analytical chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Equivalent oxide thickness, chemistry.chemical_compound, chemistry, Gate oxide, Thin-film transistor, Optoelectronics, business, Plasma processing |
| الوصف: | The impact of electrostatic charging damage on the characteristics and gate oxide integrity of polysilicon thin film transistors (TFTs) during plasma hydrogenation were investigated. Hydrogen atoms passivate trap states in the polysilicon channel; however, plasma processing induced electrostatic charging effects damage the gate oxide and the oxide/channel interface. The passivation effect of hydrogen atoms is antagonized by the generation of interface states. TFTs with different areas of antennas were used to study the damage caused by electrostatic fields. Oxide charging damage during plasma hydrogenation also seriously degrades the integrity of the gate oxide and the channel/oxide interface. |
| تدمد: | 1347-4065 0021-4922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::91e400e85925fc4399ff1859f5dac1fb https://doi.org/10.1143/jjap.36.1025 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........91e400e85925fc4399ff1859f5dac1fb |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 13474065 00214922 |
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