التفاصيل البيبلوغرافية
| العنوان: |
STM study of the MoS2 flakes grown on graphite: A model system for atomically clean 2D heterostructure interfaces |
| المؤلفون: |
Gábor Zsolt Magda, Gergely Dobrik, Zoltán Osváth, Antal A. Koós, László P. Biró, Levente Tapasztó, Chanyong Hwang, Péter Vancsó, Krisztián Kertész |
| المصدر: |
Carbon. 105:408-415 |
| بيانات النشر: |
Elsevier BV, 2016. |
| سنة النشر: |
2016 |
| مصطلحات موضوعية: |
Materials science, Graphene, Nanotechnology, Heterojunction, 02 engineering and technology, General Chemistry, Chemical vapor deposition, Electronic structure, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, law.invention, law, 0103 physical sciences, General Materials Science, Grain boundary, Graphite, Pyrolytic carbon, 010306 general physics, 0210 nano-technology |
| الوصف: |
Heterostructures of 2D materials are expected to become building blocks of next generation nanoelectronic devices. Therefore, the detailed understanding of their interfaces is of particular importance. In order to gain information on the properties of the graphene - MoS2 system, we have investigated MoS2 sheets grown by chemical vapour deposition (CVD) on highly ordered pyrolytic graphite (HOPG) as a model system with atomically clean interface. The results are compared with results reported recently for MoS2 grown on epitaxial graphene on SiC. Our STM study revealed that the crystallographic orientation of MoS2 sheets is determined by the orientation of the underlying graphite lattice. This epitaxial orientation preference is so strong that the MoS2 flakes could be moved on HOPG with the STM tip over large distances without rotation. The electronic properties of the MoS2 flakes have been investigated using tunneling spectroscopy. A significant modification of the electronic structure has been revealed at flake edges and grain boundaries. These features are expected to have an important influence on the performance of nanoelectronic devices. We have also demonstrated the ability of the STM to define MoS2 nanoribbons down to 12 nm width, which can be used as building blocks for future nanoelectronic devices. © 2016 Elsevier Ltd. All rights reserved. |
| تدمد: |
0008-6223 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::9a450a77fca8b6b5e1ca37351ab150d0
https://doi.org/10.1016/j.carbon.2016.04.069 |
| حقوق: |
CLOSED |
| رقم الأكسشن: |
edsair.doi...........9a450a77fca8b6b5e1ca37351ab150d0 |
| قاعدة البيانات: |
OpenAIRE |
