Amorphous ZrOx anti-reflective coating for improved performance of silicon solar cell devices
| العنوان: | Amorphous ZrOx anti-reflective coating for improved performance of silicon solar cell devices |
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| المؤلفون: | Deepika Jamwal, Rakesh Vaid, Nandu B. Chaure |
| المصدر: | Journal of Materials Science: Materials in Electronics. 32:19579-19593 |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Zirconium, Photoluminescence, Materials science, business.industry, chemistry.chemical_element, engineering.material, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Amorphous solid, Anti-reflective coating, Optical microscope, chemistry, Coating, law, engineering, Optoelectronics, Quantum efficiency, Electrical and Electronic Engineering, Thin film, business |
| الوصف: | We report on the synthesis and characterization of an amorphous zirconium oxide (a-ZrOx) thin film as an anti-reflective coating (ARC) for a silicon solar cell. In this work, a low-temperature non-vacuum sol–gel spin-coating method was used to synthesize a-ZrOx at room temperature by dispersing zirconium(IV) acetylacetonate in washing grade ethanol as a solvent. The formation of a-ZrOx complex by UV exposure was intended for potential PV applications. The optical and electronic properties of the synthesized a-ZrOx were characterized by EDAX, FESEM, optical microscopy, FTIR, spectroscopic ellipsometry, UV–visible spectroscopy, AFM, TEM, photoluminescence, I–V measurement, quantum efficiency measurement system, etc. The impact of increased UV exposure on the synthesized film revealed the suitability of amorphous structure for photovoltaic applications. The variation in photovoltaic properties, refractive index (1.4–1.76) at wavelength of 632 nm and roughness ~ (296 pm–720 pm) is attributed to the disparity in structural properties of the film. The use of a-ZrOx as an ARC resulted in improved short-circuit current density (Jsc), open-circuit voltage (Voc) and fill factor (FF) which led to the enhanced efficiency from 7.30% to 9.56%. The quantum efficiency measurements showed the pinholes both in the device fabrication and the spin-coated zirconium oxide. |
| تدمد: | 1573-482X 0957-4522 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9af5a746f3c48d7ec304bea794536a02 https://doi.org/10.1007/s10854-021-06478-1 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........9af5a746f3c48d7ec304bea794536a02 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1573482X 09574522 |
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