Influence of oxygen vacancy and metal–semiconductor contact on the device performance of amorphous gallium oxide photodetectors
| العنوان: | Influence of oxygen vacancy and metal–semiconductor contact on the device performance of amorphous gallium oxide photodetectors |
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| المؤلفون: | Shudong Hu, Dongyang Han, Kemin Jiang, Ningtao Liu, Wei Wang, Jinfu Zhang, Kaisen Liu, Tan Zhang, Wenrui Zhang, Jichun Ye |
| المصدر: | Applied Physics Express. 16:021005 |
| بيانات النشر: | IOP Publishing, 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | General Engineering, General Physics and Astronomy |
| الوصف: | Here we investigate the influence of the oxygen vacancy content and the electrode contact on the performance of deep ultraviolet photodetectors based on amorphous Ga2O3 films. The fine-tuning of the oxygen ratio effectively reduces the oxygen vacancy content, which obtains optimized device performance with a responsivity of 5.78 A W−1 and a rise/fall time of 301/89 ms. The metal contact formation and its impact on the device performance are further studied. Compared to the Ohmic-type device using Ti electrodes, the Schottky-type devices using Au and Al electrodes exhibit a shorter rise time and a lower dark current. |
| تدمد: | 1882-0786 1882-0778 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9cef97abb6714e6ef6134f07f33c86a3 https://doi.org/10.35848/1882-0786/acb9d3 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........9cef97abb6714e6ef6134f07f33c86a3 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 18820786 18820778 |
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