A Study on the Influence of Aluminum Oxide Layer Properties on Contact Formation

التفاصيل البيبلوغرافية
العنوان: A Study on the Influence of Aluminum Oxide Layer Properties on Contact Formation
المؤلفون: Gapp, B., Geml, F., Engelhardt, J., Hahn, G.
بيانات النشر: WIP, 2020.
سنة النشر: 2020
مصطلحات موضوعية: High Temperature Route for Si Cells, Silicon Materials and Cells
الوصف: 37th European Photovoltaic Solar Energy Conference and Exhibition; 525-528
We present an investigation of the contact formation through the widely used passivation layer stack comprised of aluminum oxide (AlOx) and silicon nitride (SiNy:H). The influence of different aluminum oxide layers deposited by either atmospheric pressure chemical vapor deposition (APCVD) or atomic layer deposition (ALD) on contact formation of screen printed silver contact paste on boron emitters is shown. Excellent contact resistivities below 1 mΩcm2 are achieved for both AlOx deposition methods. For APCVD based layers, the contact resistivity is independent of the layer thickness within the investigated range of (8...25) nm. Scanning electron microscopy is used to determine and qualitatively examine silver crystallite formation beneath screen printed silver contacts.
اللغة: English
DOI: 10.4229/eupvsec20202020-2dv.3.23
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9d1a91ffeec0ef3846b360ec4b6a5e9e
رقم الأكسشن: edsair.doi...........9d1a91ffeec0ef3846b360ec4b6a5e9e
قاعدة البيانات: OpenAIRE
الوصف
DOI:10.4229/eupvsec20202020-2dv.3.23