E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering
| العنوان: | E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack With Low Dynamic On-Resistance and High V th Stability by Field Plate Engineering |
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| المؤلفون: | Min-Lu Kao, Ching-Ting Lee, Quang Ho Luc, Edward Yi Chang, Jui-Sheng Wu, Chih-Chieh Lee, Chih-Yi Yang, Chia-Hsun Wu, Daisuke Ueda, You-Chen Weng |
| المصدر: | IEEE Electron Device Letters. 42:1268-1271 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Physics, Field (physics), Condensed matter physics, Wide-bandgap semiconductor, Gallium nitride, Charge (physics), High-electron-mobility transistor, On resistance, Ferroelectricity, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry.chemical_compound, chemistry, Electrical and Electronic Engineering |
| الوصف: | A high-performance E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMT with an innovative source-connected field plate (SCFP) structure is reported for the first time. The optimized E-mode FEG-HEMT implements a novel SCFP structure, which creates a cascode-like configuration with a D-mode GaN MISHEMT. This E-mode SCFP GaN FEG-HEMT has a positive ${V}_{\text {th}}$ of 2.81 V, a high ${I}_{\text {D,max}}$ of 757mA/mm, and a BV of 866 V. Dynamic ${R}_{\text {ON}}$ reduced 25% when operated at ${V}_{\text {DSQ}} =400$ V. ON-state stress tests also show improved current collapse phenomena. Additionally, to address the charge storage abilities of FEG-HEMTs, a multi-cycle OFF-state ( ${V}_{\text {DS}} =300$ V, ${V}_{\text {GS}} =0$ V) retention test was conducted. The SCFP FEG-HEMT showed 58.46% less ${V}_{\text {th}}$ shift percentage than the FEG-HEMT without field plates. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::9d664166a15d21d9bc94772a6ed81976 https://doi.org/10.1109/led.2021.3098726 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........9d664166a15d21d9bc94772a6ed81976 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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