أعرض في EDS

Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics

التفاصيل البيبلوغرافية
العنوان: Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
المؤلفون: Toshio Matsusue, L.-H. Lin, Yuichi Ochiai, S. F. Yoon, T. K. Ng, S. Z. Wang
المصدر: Journal of Applied Physics. 94:3110-3114
بيانات النشر: AIP Publishing, 2003.
سنة النشر: 2003
مصطلحات موضوعية: Photoluminescence, Materials science, Condensed matter physics, Annealing (metallurgy), Gaussian, General Physics and Astronomy, Activation energy, Gallium arsenide, symbols.namesake, chemistry.chemical_compound, chemistry, Thermal, symbols, Atomic physics, Carrier dynamics, Quantum well
الوصف: Variable temperature photoluminescence (PL) measurement of a thermal-annealed 6 nm GaInNAs/GaAs quantum well (QW) is carried out to understand its low-temperature carrier dynamic characteristics. It is found that the effect of carrier localization, which remained after a thermal anneal, is due possibly to a center characterized by a transition with activation energy of 13.7 meV below the e1 state. This result is deduced from fitting the integrated PL intensity versus the temperature data with a single-activation-energy model. A comparable value of 11 meV was also obtained between the low-energy (main localized state) and high-energy (e1 state) Gaussian functions used to fit the low-temperature PL spectrum. The localization effect in the thermal-annealed GaInNAs/GaAs QW is further confirmed by time-resolved PL measurements at 17 K, which showed emission-energy-dependent PL decay time characteristic for the low-energy regime (below 1.045 eV) and nearly constant decay time of about 0.14 ns at the high-energy...
تدمد: 1089-7550
0021-8979
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9ebe7e78d2ba0f73cb33af85f18e0f34
https://doi.org/10.1063/1.1601297
رقم الأكسشن: edsair.doi...........9ebe7e78d2ba0f73cb33af85f18e0f34
قاعدة البيانات: OpenAIRE
الوصف
تدمد:10897550
00218979