We report on of high operating temperature (HOT) long-wavelength infrared radiation (LWIR) type-II superlattices (T2SLs) InAs/InAsSb photoconductor grown on buffered semi-insulating GaAs substrate. The absorber of the device consists of a 300 periods of T2SLs InAs/InAsSb. The high resolution X-ray diffraction (HRXRD), photoluminescence (PL), Hall, Optical Parametric Oscillator (OPO) measurements are presented and analyzed. The detector reached a 50% cut-off wavelength of 9.8 μm and 10.4 μm at 210 K and 230 K, respectively. The time constant of 24 ns is observed at 210 K under 0.5 V bias. The detectivity (D∗) of ∼ 2.0 × 1010 cm Hz1/2/W at 210 K is reached.
