Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress
| العنوان: | Hot-Carrier Instability of nMOSFETs Under Pseudorandom Bit Sequence Stress |
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| المؤلفون: | Soo Cheol Kang, Yonghun Kim, Seung Mo Kim, Byoung Hun Lee, Ukjin Jung, Sang Kyung Lee |
| المصدر: | IEEE Electron Device Letters. 37:366-368 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Infrasound, 02 engineering and technology, Mechanics, 021001 nanoscience & nanotechnology, 01 natural sciences, Instability, Pseudorandom binary sequence, Electronic, Optical and Magnetic Materials, Stress (mechanics), Logic gate, 0103 physical sciences, Electronic engineering, Electrical and Electronic Engineering, 0210 nano-technology, Random logic, Jitter, Degradation (telecommunications) |
| الوصف: | Hot-carrier instability under stress conditions emulating a random logic operation (random ON and OFF) has been investigated using pseudorandom bit sequence (PRBS) stress patterns. Furthermore, the impacts of PRBS stress on circuit-level operation have been compared with the conventional dc (static) and ac (periodic) stress conditions using hot-carrier-induced random timing jitter. It was observed that the recovery achieved by charge trapping and detrapping under dynamic stress conditions significantly affects the degree of hot-carrier degradation. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a3db50a29b4fc04cc5f1e2af8503f1ef https://doi.org/10.1109/led.2016.2533568 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........a3db50a29b4fc04cc5f1e2af8503f1ef |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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