Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2
| العنوان: | Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2 |
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| المؤلفون: | Xinjian Lei, Jungwon Park, Kunwoo Park, Sang Mo Yang, Tae Yoon Lee, Dong Ik Suh, Matthew R. MacDonald, Hyang Keun Yoo, Hong Heon Lim, Seung Chul Chae, Hu Young Jeong, Dong-Hoon Lee, Kyoungjun Lee, Myeong Seop Song, Alexander Yoon, Zhongwei Zhu |
| المصدر: | ACS Applied Materials & Interfaces. 11:3142-3149 |
| بيانات النشر: | American Chemical Society (ACS), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Condensed matter physics, Monte Carlo method, Si doped, 02 engineering and technology, Wake, 021001 nanoscience & nanotechnology, Polarization (waves), 01 natural sciences, Ferroelectricity, Condensed Matter::Materials Science, Electric field, 0103 physical sciences, General Materials Science, Thin film, 0210 nano-technology |
| الوصف: | The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the “wake-up” effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is acco... |
| تدمد: | 1944-8252 1944-8244 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a67787e9c3e852e62a4d2527e4c311d0 https://doi.org/10.1021/acsami.8b11681 |
| رقم الأكسشن: | edsair.doi...........a67787e9c3e852e62a4d2527e4c311d0 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 19448252 19448244 |
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