Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry
| العنوان: | Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry |
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| المؤلفون: | Byoung Hun Lee, Jongwoo Park, Young Gon Lee, Jin Ju Kim, Kyong Taek Lee, Yonghun Kim, Minhyeok Choe, Ukjin Jung, Sangwoo Pae |
| المصدر: | IEEE Transactions on Electron Devices. 62:1092-1097 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2015. |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Materials science, Gate oxide, Gate dielectric, MOSFET, Extraction (chemistry), Analytical chemistry, Time domain, Electrical and Electronic Engineering, Reflectometry, Capacitance, Electronic, Optical and Magnetic Materials, High-κ dielectric |
| الوصف: | The effective mobility ( $\mu _{\rm { {eff}}}$ ) of MOSFETs with ultrathin high- $k$ gate dielectric ( ${\rm EOT}= 0.85$ nm) has been successfully extracted using a time domain reflectometry method. A ground–signal–ground–ground probe configuration is used to analyze the gate-to-channel capacitance ( $C_{\rm { {gc}}}$ ), gate-to-bulk capacitance ( $C_{\rm { {gb}}}$ ), and total gate capacitance ( $C_{g}$ ) without a complex RF test structure. Using this method, the effective mobility can be extracted even in the presence of a high gate leakage current ( $\sim 30$ A/cm $^{\rm { {2}}}$ ) when the conventional split capacitance–voltage method using an impedance analyzer cannot be applied. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a7b4ce081bdf1bcd847c449d87e287ab https://doi.org/10.1109/ted.2015.2404920 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........a7b4ce081bdf1bcd847c449d87e287ab |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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