Charge collection by capacitive influence through isolation oxides
| العنوان: | Charge collection by capacitive influence through isolation oxides |
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| المؤلفون: | Marty R. Shaneyfelt, O. Flament, V. Ferlet-Cavrois, A. Torres, J. Baggio, J.R. Schwank, G. Vizkelethy, P. Paillet |
| المصدر: | IEEE Transactions on Nuclear Science. 50:2208-2218 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2003. |
| سنة النشر: | 2003 |
| مصطلحات موضوعية: | Nuclear and High Energy Physics, Materials science, business.industry, Capacitive sensing, Electrical engineering, Silicon on insulator, Charge (physics), Hardware_PERFORMANCEANDRELIABILITY, Substrate (electronics), Charge sharing, law.invention, Capacitor, Nuclear Energy and Engineering, Hardware_GENERAL, law, Trench, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electrical and Electronic Engineering, business, Dram |
| الوصف: | This paper analyzes the collected charge in heavy ion irradiated MOS structures. The charge generated in the substrate induces a displacement effect which strongly depends on the capacitor structure. Networks of capacitors are particularly sensitive to charge sharing effects. This has important implications for the reliability of SOI and DRAMs which use isolation oxides as a key elementary structure. The buried oxide of present day and future SOI technologies is thick enough to avoid a significant collection from displacement effects. On the other hand, the retention capacitors of trench DRAMs are particularly sensitive to charge release in the substrate. Charge collection on retention capacitors participate to the MBU sensitivity of DRAM. |
| تدمد: | 1558-1578 0018-9499 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a80067afc5f7b2642ce078f81b22c903 https://doi.org/10.1109/tns.2003.821818 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........a80067afc5f7b2642ce078f81b22c903 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581578 00189499 |
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