In 0.53 Ga 0.47 As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In 0.53 Ga 0.47 As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., I on /I off ∼105, DIBL ∼51 mV/V at V ds = 0.5V for L g =150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (µ EF = 1837 cm2/V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In 0.53 Ga 0.47 As MOSFETs.
