Application of Two-Phase Immersion Cooling Technique for Performance Improvement of High Power and High Repetition Avalanche Transistorized Subnanosecond Pulse Generators
| العنوان: | Application of Two-Phase Immersion Cooling Technique for Performance Improvement of High Power and High Repetition Avalanche Transistorized Subnanosecond Pulse Generators |
|---|---|
| المؤلفون: | Zichen Deng, Weidong Ding, Zihao Yang, Yanan Wang, Linyuan Ren |
| المصدر: | IEEE Transactions on Power Electronics. 37:3024-3039 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2022. |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Materials science, business.industry, Pulse generator, Thermal resistance, Transistor, Liquid dielectric, law.invention, law, Avalanche transistor, Rise time, Optoelectronics, Electrical and Electronic Engineering, business, Jitter, Voltage |
| الوصف: | In this paper, we show the feasibility of improving the performance of a high voltage and high repetition avalanche transistor pulse generator by applying a two-phase immersion cooling technique. The forced air cooling, single-phase immersion cooling, and two-phase immersion cooling technique was applied to a 60-stage sub-nanosecond pulse generator. The experimental results indicate that the two-phase immersion cooling technique can effectively control the temperature rising and thus reduce the time base jitter and voltage amplitude jitter. Five types of dielectric fluid with different boiling temperatures were comparatively studied. The FC-72 was finally adopted for the balanced performance on voltage amplitude and repetition rate. The two-phase immersion cooling technique could reduce the thermal resistance between the case and ambient, and increase the power from 330mW to 876mW. With this cooling method, the surface temperature of the transistor can be effectively controlled below 62. The pulse generator could achieve outstanding performance with a voltage of 2350 V and a rise time of 180 ps. It can work stably at 200 kHz for more than 30 minutes, and the burst repetition rate could be 260 kHz within one minute. This work offers new perspectives in high repetitive avalanche transistorized sub-nanosecond generators. |
| تدمد: | 1941-0107 0885-8993 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a8d7aa32fb78ca752458af2429769dcf https://doi.org/10.1109/tpel.2021.3111348 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........a8d7aa32fb78ca752458af2429769dcf |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19410107 08858993 |
|---|