An Industrial LPCVD Process for In Situ Phosphorus‐Doped Polysilicon
| العنوان: | An Industrial LPCVD Process for In Situ Phosphorus‐Doped Polysilicon |
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| المؤلفون: | P. Eppenga, J. E. Tong, M. Hendriks, J. G. M. Mulder |
| المصدر: | Journal of The Electrochemical Society. 137:273-279 |
| بيانات النشر: | The Electrochemical Society, 1990. |
| سنة النشر: | 1990 |
| مصطلحات موضوعية: | Renewable Energy, Sustainability and the Environment, Chemistry, Doping, Analytical chemistry, Mineralogy, Chemical vapor deposition, Partial pressure, Condensed Matter Physics, Grain size, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Electrical resistivity and conductivity, Torr, Materials Chemistry, Electrochemistry, Grain boundary, Wafer |
| الوصف: | The low pressure chemical vapor deposition of in situ phosphorus‐doped polysilicon films from and was investigated in a production‐type hot wall horizontal tube reactor as a function of mole ratio and deposition temperature. With increasing partial pressure, a reduction in growth rate is observed because the dissociative chemisorption of is inhibited. The reaction proceeds via homogeneous gas phase reactions which explains that, in our case where we operate at a relatively high pressure of about 1 torr, the reduction in growth rate is limited to a factor of 2 (87–45 A/min). By using caged cassettes and an injector, the uniformities were better than ±5% for a load of 100 wafers with a diameter of 125 mm, maintaining a flat temperature profile, within 0.5°C over the boat. The grain size and crystalline structure were studied with transmission electron microscopy. Films deposited at 580°C appeared to have the largest grain size and a perfectly smooth surface. Correspondingly, the resistivity of saturated doped films revealed a minimum value just above 500 μΩcm for a deposition temperature of 580°C. A linear relation between resistivity and inverse grain size was established. This relationship can be explained by a model that takes into account the resistance of grain boundaries. |
| تدمد: | 1945-7111 0013-4651 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::a974dd32498d10146e3f7796177d5428 https://doi.org/10.1149/1.2086381 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........a974dd32498d10146e3f7796177d5428 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19457111 00134651 |
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