Reaction kinetics control in preparation of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy
| العنوان: | Reaction kinetics control in preparation of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy |
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| المؤلفون: | Guang-Yu Wei, Rui-Wu Peng, Yong-Qing Ding |
| المصدر: | Journal of Electronic Materials. 23:221-224 |
| بيانات النشر: | Springer Science and Business Media LLC, 1994. |
| سنة النشر: | 1994 |
| مصطلحات موضوعية: | Solid-state physics, Chemistry, Semiconductor materials, Inorganic chemistry, Vapor phase, Analytical chemistry, Partial pressure, Condensed Matter Physics, Epitaxy, Cadmium telluride photovoltaics, Electronic, Optical and Magnetic Materials, Chemical kinetics, Materials Chemistry, Electrical and Electronic Engineering, Group 2 organometallic chemistry |
| الوصف: | The growth rates of CdTe and HgCdTe by hot wall metalorganic vapor phase epitaxy were studied as functions of growth temperatures and partial pressures of precursors. It is suggested that the growth of CdTe and HgCdTe was controlled by reaction kinetics. The relationship between growth processes and epilayer properties was discussed and high quality epilayers were obtained. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::aaf6cd0ee3c9ba894fd24267f15661ba https://doi.org/10.1007/bf02655273 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........aaf6cd0ee3c9ba894fd24267f15661ba |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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