Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy
| العنوان: | Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy |
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| المؤلفون: | Achim Trampert, U. Jahn, S Gaucher, Jens Herfort, Bernd Jenichen, J. Kalt |
| المصدر: | Applied Physics Letters. 110:102103 |
| بيانات النشر: | AIP Publishing, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Physics and Astronomy (miscellaneous), business.industry, Superlattice, chemistry.chemical_element, Germanium, Heterojunction, 02 engineering and technology, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Epitaxy, 01 natural sciences, Condensed Matter::Materials Science, Crystallography, Semiconductor, chemistry, Ferromagnetism, Condensed Matter::Superconductivity, 0103 physical sciences, Optoelectronics, Thin film, 0210 nano-technology, business, Molecular beam epitaxy |
| الوصف: | Ferromagnetic Heusler alloys can be used in combination with semiconductors to create spintronic devices. The materials have cubic crystal structures, making it possible to grow lattice-matched heterojunctions by molecular beam epitaxy. However, the development of devices is limited by the difficulty of growing epitaxial semiconductors over metallic surfaces while preventing chemical reactions, a requirement to obtain abrupt interfaces and achieve efficient spin-injection by tunneling. We used a solid-phase epitaxy approach to grow crystalline thin film stacks on GaAs(001) substrates, while preventing interfacial reactions. The crystallized Ge layer forms superlattice regions, which are caused by the migration of Fe and Si atoms into the film. X-ray diffraction and transmission electron microscopy indicate that the trilayers are fully crystalline, lattice-matched, and have ideal interface quality over extended areas. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ab4d1339a081c406b0f6f152b6053d1b https://doi.org/10.1063/1.4977833 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........ab4d1339a081c406b0f6f152b6053d1b |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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