Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
العنوان: | Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate |
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المؤلفون: | Jae Kyoung Mun, Woo-Jin Chang, Jae-Won Do, Hyun-Wook Jung, Kyu-Jun Cho |
المصدر: | ECS Journal of Solid State Science and Technology. 8:Q3079-Q3082 |
بيانات النشر: | The Electrochemical Society, 2019. |
سنة النشر: | 2019 |
مصطلحات موضوعية: | Materials science, Field (physics), business.industry, Breakdown voltage, Optoelectronics, business, Electronic, Optical and Magnetic Materials |
تدمد: | 2162-8777 2162-8769 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ac0b05cd774f60a768495378231c29fc https://doi.org/10.1149/2.0151907jss |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi...........ac0b05cd774f60a768495378231c29fc |
قاعدة البيانات: | OpenAIRE |
تدمد: | 21628777 21628769 |
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