Reducing a Piezoelectric Field in InGaN Active Layers by Varying Pattern Sapphire Substrates
| العنوان: | Reducing a Piezoelectric Field in InGaN Active Layers by Varying Pattern Sapphire Substrates |
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| المؤلفون: | Kuei-Ting Chen, Chang-Hua Hsieh, Wang-Po Tseng, Bing-Cheng Shieh, Chia-Feng Lin |
| المصدر: | IEEE Transactions on Electron Devices. 60:4180-4184 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2013. |
| سنة النشر: | 2013 |
| مصطلحات موضوعية: | Materials science, Field (physics), business.industry, Piezoelectricity, Electronic, Optical and Magnetic Materials, law.invention, law, Sapphire, Optoelectronics, Quantum efficiency, Electrical and Electronic Engineering, business, Diode, Light-emitting diode, Voltage, Pyramid (geometry) |
| الوصف: | Internal quantum efficiency (IQE) and piezoelectric field (PZ) in InGaN light-emitting diodes (LEDs) were analyzed that were grown on a truncated pyramid (TP)- and a pyramid (P)-shaped pattern sapphire substrates. Lower flat-band voltage was measured at -8 V in the P-LED compared with the TP-LED (-12 V) that showed a low PZ was observed in the P-LED structure. The IQE value of the P-LED was measured as 86%, which is higher than that of the TP-LED (76%). High IQE, low PZ, and high light extraction efficiency were observed in the InGaN LED structure grown on the P-shaped pattern sapphire substrate. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::ac6b113111dd89be2ae40d79cb56c884 https://doi.org/10.1109/ted.2013.2284918 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........ac6b113111dd89be2ae40d79cb56c884 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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