Quantum Transport in Boron-Doped Nanocrystalline Diamond
| العنوان: | Quantum Transport in Boron-Doped Nanocrystalline Diamond |
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| المؤلفون: | Pavel Hubík, Jozef Krištofik, Milos Nesladek, D. Kindl, Jiri J. Mares |
| المصدر: | Chemical Vapor Deposition. 14:161-172 |
| بيانات النشر: | Wiley, 2008. |
| سنة النشر: | 2008 |
| مصطلحات موضوعية: | Superconductivity, Materials science, Condensed matter physics, Process Chemistry and Technology, Nucleation, Diamond, chemistry.chemical_element, Surfaces and Interfaces, General Chemistry, engineering.material, Weak localization, Condensed Matter::Materials Science, chemistry, Condensed Matter::Superconductivity, Ballistic conduction, engineering, Grain boundary, Thin film, Boron |
| الوصف: | Highly grained thin films of boron-doped diamond are grown by plasma-enhanced (PE)CVD. Diamond nucleation surface treatment is discussed, together with its relation to the morphology, topology, and phase composition of the layers. The influence of the random incorporation of boron atoms in a diamond lattice is described in terms of Mott's metal and the weak localization (WL) transport mechanism. Starting from these concepts and from the experimental transport data, we build up a simple original theory of the superconductivity in boron-doped diamond that is based on a spinflip pairing mechanism. We analyze an influence of the grain boundaries in nanocrystalline diamond (NCD) on superconductivity-related quantum transport phenomena, and show a decisive role of the weak links created by point contacts between grains. |
| تدمد: | 1521-3862 0948-1907 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::aeaaf9bb48fdb038ebdff0cb1a1d9777 https://doi.org/10.1002/cvde.200700038 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........aeaaf9bb48fdb038ebdff0cb1a1d9777 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15213862 09481907 |
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