Enhanced electrochemical energy storage performance of reduced graphene oxide by incorporating oxygen-rich in-plane pores
| العنوان: | Enhanced electrochemical energy storage performance of reduced graphene oxide by incorporating oxygen-rich in-plane pores |
|---|---|
| المؤلفون: | Shengqiang Xiao, Chun Zhan, Lifen Peng, Wei You, Luhua Lu |
| المصدر: | J. Mater. Chem. A. 2:1802-1808 |
| بيانات النشر: | Royal Society of Chemistry (RSC), 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Materials science, Renewable Energy, Sustainability and the Environment, Graphene, Oxide, Nanotechnology, General Chemistry, Conductivity, Pseudocapacitance, law.invention, chemistry.chemical_compound, Chemical engineering, chemistry, law, Etching (microfabrication), Electrode, General Materials Science, Power density, Graphene oxide paper |
| الوصف: | To effectively enhance the electrochemical energy storage performance of graphene-based materials, oxygen-rich in-plane pores were incorporated into graphene backbones through sonochemical etching of graphene oxide (GO) and sequential chemical reduction treatment. The etching of GO produced a large amount of in-plane nanoscale pores with a high content of oxygen atoms. The hydrazine reduction treatment of etched GO (EGO) resulted in a porous basal plane with good electrical conductivity and preserved electrochemically active oxygen atoms. It is found that good conductivity and in-plane nanoscale pores of reduced EGO (REGO) with enriched electrochemically active oxygen groups synergistically reinforce the electric double-layer capacitance (EDLC) and the pseudocapacitance performance over a wide power density range. Electrodes using REGO demonstrated a maximum energy density of 47 W h kg−1, which is almost three times that of reduced graphene oxide (RGO) without etching treatment, while simultaneously displaying a high power density of up to 100 kW kg−1 with considerable energy density. |
| تدمد: | 2050-7496 2050-7488 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b13d3ff84f6c8517b0004ab05ae88b8c https://doi.org/10.1039/c3ta13678g |
| رقم الأكسشن: | edsair.doi...........b13d3ff84f6c8517b0004ab05ae88b8c |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 20507496 20507488 |
|---|