Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices
| العنوان: | Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices |
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| المؤلفون: | Young-Ill Kim, Kyongmin Kim, Eunkyeom Kim, Jung Hyun Sok, Kyoungwan Park |
| المصدر: | Journal of the Korean Physical Society. 69:1798-1804 |
| بيانات النشر: | Korean Physical Society, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Oxide, General Physics and Astronomy, Nanotechnology, 02 engineering and technology, Sputter deposition, 021001 nanoscience & nanotechnology, Thermal conduction, 01 natural sciences, Resistive random-access memory, Non-volatile memory, chemistry.chemical_compound, chemistry, 0103 physical sciences, Optoelectronics, Thin film, 0210 nano-technology, business, Layer (electronics), Deposition (law) |
| الوصف: | Bipolar resistive switching in ZnO/SiOx bi-layer and ZnO/SiOx/ZnO tri-layer structures was investigated for nonvolatile memory applications. ZnO thin films were grown using the radiofrequency magnetron sputtering technique at room temperature. SiOx films were grown using plasma-enhanced chemical-vapor deposition at 200 °C. Multiple high-resistance states were observed during the set process. The high/low resistance state ratio was ~10 during ~100 on/off cycles. The tri-layer memory device exhibited better endurance properties than the bi-layer device. Because an asymmetric conducting filament has a weak point for charge conduction at the oxide interfaces, we attributed the good endurance property to the reproducible formation/rupture of “micro”-conducting filaments. Moreover, the dynamics of the oxygen ions in the SiOx layer plays an important role in resistive switching. |
| تدمد: | 1976-8524 0374-4884 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b2744d94e26318bbdc9d66a7797733af https://doi.org/10.3938/jkps.69.1798 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........b2744d94e26318bbdc9d66a7797733af |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 19768524 03744884 |
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