Crystallinity, strain, and thermal stability of heteroepitaxial Si1−xGex/Si (100) layers created using pulsed laser induced epitaxy
| العنوان: | Crystallinity, strain, and thermal stability of heteroepitaxial Si1−xGex/Si (100) layers created using pulsed laser induced epitaxy |
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| المؤلفون: | K.‐Josef Kramer, Thomas W. Sigmon, Somit Talwar, Kurt H. Weiner |
| المصدر: | Applied Physics Letters. 61:769-771 |
| بيانات النشر: | AIP Publishing, 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), Excimer laser, Annealing (metallurgy), medicine.medical_treatment, Recrystallization (metallurgy), Mineralogy, Heterojunction, Epitaxy, Crystallinity, medicine, Thermal stability, Thin film, Composite material |
| الوصف: | Heteroepitaxy of Si1−xGex/Si alloy layers on Si (100) substrates has been achieved using pulsed laser induced epitaxy (PLIE). The energy of 1 to 20 pulses from a spatially homogenized XeCl excimer laser beam is used to melt a structure consisting of electron‐beam evaporated Ge on Si (100) substrates. Alloy films with different Ge fractions are investigated and films with up to 21% Ge content are found to exhibit excellent crystallinity, as confirmed by MeV‐ion channeling along the 〈100〉 direction. MeV‐ion channeling is also used to determine the level of strain in the layers. This is done by comparing angular yield curves around the 〈110〉 direction for the substrate and alloy layer. The strain values obtained match with calculations for an ideally strained layer state. The strain is also measured for layers that have been subjected to different thermal cycles. A high level of strain is preserved in the alloy layer even after heating to 950 °C for 1 h. This unusual thermal stability is believed to be due t... |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b35d64f27805ec77174c2341a4295c1b https://doi.org/10.1063/1.107793 |
| رقم الأكسشن: | edsair.doi...........b35d64f27805ec77174c2341a4295c1b |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
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