Degradation of ion implanted GaAs MESFETs
| العنوان: | Degradation of ion implanted GaAs MESFETs |
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| المؤلفون: | H. Thomas, J. Goostray, G. M. Gauneau, J. M. Dumas, D.V. Morgan, R. Conlon |
| المصدر: | Quality and Reliability Engineering International. 7:339-342 |
| بيانات النشر: | Wiley, 1991. |
| سنة النشر: | 1991 |
| مصطلحات موضوعية: | Materials science, business.industry, Electrical engineering, chemistry.chemical_element, Trapping, Management Science and Operations Research, Ion, Life testing, chemistry, Optoelectronics, Degradation (geology), Microelectronics, Diffusion (business), Safety, Risk, Reliability and Quality, business, Platinum |
| الوصف: | Ion-implanted Si-doped GaAs MESFETs with 1μm and 5μm gate lengths have been subjected to DC life testing at temperatures of 220°C and 250°C for 4000 and 2250 h, respectively. Two failure mechanisms have been identified: 1 Diffusion of platinum from the gate contact into the n-GaAs channel. 2 An increase of deep-level trapping, specifically of EL2 (Ea=0.8 eV), in the channel region. |
| تدمد: | 1099-1638 0748-8017 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b3cdbcfad6401244aada28250e8f6dca https://doi.org/10.1002/qre.4680070421 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........b3cdbcfad6401244aada28250e8f6dca |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 10991638 07488017 |
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