A p‐p + Homojunction‐Enhanced Hole Transfer in Inverted Planar Perovskite Solar Cells
| العنوان: | A p‐p + Homojunction‐Enhanced Hole Transfer in Inverted Planar Perovskite Solar Cells |
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| المؤلفون: | Hongshi Li, Jian Song, Sheng Huang, Lei Zhu, Yinghuai Qiang, Qinyuan Qiu, Yulong Zhao, Guo-Ran Li, Xinfeng Yan, Liang Zhao |
| المصدر: | ChemSusChem. 14:1396-1403 |
| بيانات النشر: | Wiley, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, business.industry, General Chemical Engineering, Energy conversion efficiency, Non-blocking I/O, Perovskite solar cell, 02 engineering and technology, 010402 general chemistry, 021001 nanoscience & nanotechnology, Solar energy, 01 natural sciences, 0104 chemical sciences, General Energy, Band bending, Depletion region, Environmental Chemistry, Optoelectronics, General Materials Science, Homojunction, 0210 nano-technology, business, Perovskite (structure) |
| الوصف: | Perovskite solar cells (PSCs) have triggered a research trend in solar energy devices in view of their high power conversion efficiency and ease of fabrication. However, more delicate strategies are still required to suppress carrier recombination at charge transfer interfaces, which is the necessary path to high-efficiency solar cells. Here, a p-p+ homojunction was constructed on basis of NiO film to enhance hole transfer in an inverted planar perovskite solar cell. The homojunction was generated by fabricating a NiO/Cu:NiO bilayer film. The density functional theory calculation demonstrated the charge density difference in the two layers, which could generate a space charge region and a band bending at the junction, and the result was further proved by energy level structure analysis of NiO and Cu:NiO films. The designed homojunction could accelerate the hole transfer and inhibit carrier recombination at the interface between hole transfer layer and perovskite layer. Finally, the inverted planar perovskite solar cell with p-p+ homojunction showed an efficiency of 18.30 % and a high fill factor of 0.81, which were much higher than the counterpart of the PSCs individually using NiO or Cu:NiO as hole transfer layer. This work developed a new structure of hole transport layer to enhance the performance of PSCs, and also provided new ideas for design of charge transfer films. |
| تدمد: | 1864-564X 1864-5631 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b470cbfaff4d134ac50458adc620d021 https://doi.org/10.1002/cssc.202100083 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........b470cbfaff4d134ac50458adc620d021 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1864564X 18645631 |
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