In–NandN–Ncorrelation inInxGa1−xAs1−yNy∕GaAsquasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study

التفاصيل البيبلوغرافية
العنوان: In–NandN–Ncorrelation inInxGa1−xAs1−yNy∕GaAsquasi-lattice-matched quantum wells: A cross-sectional scanning tunneling microscopy study
المؤلفون: Silvio Modesti, G. Bais, Gustavo Ceballos, P. Finetti, Faustino Martelli, M. Piccin, C. Nacci, A. Franciosi, R. Duca, D. Furlanetto, Silvia Rubini, A. Cristofoli
المصدر: Physical Review B. 72
بيانات النشر: American Physical Society (APS), 2005.
سنة النشر: 2005
مصطلحات موضوعية: Materials science, Condensed matter physics, Annealing (metallurgy), Scanning tunneling spectroscopy, Doping, Spin polarized scanning tunneling microscopy, Condensed Matter Physics, Molecular physics, Electronic, Optical and Magnetic Materials, law.invention, Impurity, law, Lattice (order), Scanning tunneling microscope, Quantum well
تدمد: 1550-235X
1098-0121
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b4ba221d1ddd2e44fb99e8549cf2ae70
https://doi.org/10.1103/physrevb.72.075311
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........b4ba221d1ddd2e44fb99e8549cf2ae70
قاعدة البيانات: OpenAIRE