A systematic study of time dependent source/drain junction degradation (TDJD) for extremely scaled FinFETs is conducted. It is verified that junction degradation can be attributed to the increase in band to band tunneling due to generation of new traps upon application of stress. Impact of varying stress conditions, drain engineering and junction area on TDJD is also studied. It is shown for the first time that TDJD follows 1/E model based on the long-term stress data.
