Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin–orbit torque induced magnetization switching in synthetic antiferromagnetic layer
| العنوان: | Implementation of a full Wheatstone-bridge GMR sensor by utilizing spin–orbit torque induced magnetization switching in synthetic antiferromagnetic layer |
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| المؤلفون: | Keliu Luo, Yonghai Guo, Wangda Li, Bo Zhang, Bo Wang, Jiangwei Cao |
| المصدر: | Journal of Applied Physics. 133:153902 |
| بيانات النشر: | AIP Publishing, 2023. |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | General Physics and Astronomy |
| الوصف: | A giant magnetoresistance (GMR) sensor with a Wheatstone bridge structure and an out-of-plane linear response was developed. The spin-valve structure consists of a synthetic antiferromagnetic [(Co/Pt)n/Ru/(Pt/Co)n] reference layer with perpendicular magnetic anisotropy, a Cu spacer layer, and a Co-free layer with in-plane easy magnetization. By utilizing the spin–orbit torque induced magnetization switching in the synthetic antiferromagnetic layer, the magnetization of the reference layers in the adjacent bridge arms is set to the opposite direction, achieving a GMR sensor with a full Wheatstone bridge structure. The sensor exhibits linear response to the out-of-plane magnetic field with adjustable dynamic ranges from hundreds to thousands of Oe, depending on the thickness of the Co-free layer. A similar Wheatstone bridge sensor consisting of magnetic tunnel junctions was also proposed. The sensor with out-of-plane linear response may have promising applications in three-dimensional magnetic field detection and current sensing field. |
| تدمد: | 1089-7550 0021-8979 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b6d5aa85d26675f5b14f77ed5cde73b7 https://doi.org/10.1063/5.0137559 |
| رقم الأكسشن: | edsair.doi...........b6d5aa85d26675f5b14f77ed5cde73b7 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10897550 00218979 |
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