AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic

التفاصيل البيبلوغرافية
العنوان: AlGaN High Electron Mobility Transistor for Power Switches and High Temperature Logic
المؤلفون: Brianna Klein, Andrew Armstrong, Andrew Allerman, Christopher Nordquist, Jason Neely, Shahed Reza, Erica Douglas, Michael Van Heukelom, Anthony Rice, Victor Patel, Benjamin Matins, Torben Fortune, Mary Rosprim, Lisa Caravello, Rebecca DeBerry, Jennifer Pipkin, Vincent Abate, Robert Kaplar
المصدر: Proposed for presentation at the Lester Eastman Conference held August 2-4, 2021 in South Bend, IN US.
بيانات النشر: US DOE, 2021.
سنة النشر: 2021
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b70c7ed2bc8a673c07d040bf02269e95
https://doi.org/10.2172/1882105
رقم الأكسشن: edsair.doi...........b70c7ed2bc8a673c07d040bf02269e95
قاعدة البيانات: OpenAIRE