Preparation of controllable-thickness 1T@2H-MoS2 thin films by pulsed laser-induced synthesis and the selective separation of the 1T phase
العنوان: | Preparation of controllable-thickness 1T@2H-MoS2 thin films by pulsed laser-induced synthesis and the selective separation of the 1T phase |
---|---|
المؤلفون: | Wang Wenzhao, Jingjing Lu, Jin Wen, Ren Tingting, Zhou Guangtong, Guo Zhenyu, Xiangbin Zeng, Yang Zeng, Shibo Wang, Wu Shaoxiong, Yonghong Xiao, Hu Yishuo |
المصدر: | Journal of Materials Chemistry C. 6:11651-11658 |
بيانات النشر: | Royal Society of Chemistry (RSC), 2018. |
سنة النشر: | 2018 |
مصطلحات موضوعية: | Pulsed laser, Materials science, Absorption spectroscopy, Magnetism, business.industry, 02 engineering and technology, General Chemistry, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Energy storage, 0104 chemical sciences, Characterization (materials science), Phase (matter), Materials Chemistry, Optoelectronics, Thin film, 0210 nano-technology, business, Electrical conductor |
الوصف: | Ultrathin 1T@2H-MoS2 films have excellent electronic and optical properties, and are potentially applicable in optics, electronics, energy storage, and sensing technology. However, identification of an efficient method to produce 1T@2H-MoS2 films with controllable thickness is challenging. This study describes the rapid synthesis (5–10 min) of 1T@2H-MoS2 thin films on Si/SiO2 substrates by a novel pulsed laser irradiation method. We verify the photodecomposition reaction model by measuring the UV-Vis absorption spectra of the reactants. The thickness of the synthesized MoS2 film can be controlled by adjusting the concentration of the precursor. Structural characterization confirms that both the 1T and 2H phases exist in the MoS2 film. The 1T phase enhances the conductive behavior of the MoS2 film and induces magnetism. Furthermore, pure 1T-MoS2 can be separated selectively from the MoS2 film under specific operating conditions using pulsed laser-induced synthesis. This approach is suitable for the synthesis of films of MoS2 and other 2D materials, including 1T phase-pure films. |
تدمد: | 2050-7534 2050-7526 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::b7e07937a33b6e18d2eb96a658f06bbf https://doi.org/10.1039/c8tc03815e |
حقوق: | CLOSED |
رقم الأكسشن: | edsair.doi...........b7e07937a33b6e18d2eb96a658f06bbf |
قاعدة البيانات: | OpenAIRE |
تدمد: | 20507534 20507526 |
---|