Homoepitaxial non-polar AlN films were realized on m-plane ( 10 1 - 0 ) -oriented AlN single crystals by metalorganic chemical vapor deposition (MOCVD). The microstructural properties of m-plane AlN substrates and homoepitaxial films were assessed by means of atomic force microscopy and high resolution x-ray diffraction characterization. Results indicated that both m-plane AlN substrates and films possessed exceptional structural quality, with some anisotropic mosaic distributions due to the quasi-bulk nature of the non-polar single crystals. An increase in the MOCVD growth temperature was noted to minimize the degree of inherited mosaic anisotropy without altering the m-plane AlN film growth rate, indicating that high temperature growth is critical to produce optimal film crystallinity. A dramatic change in the film surface morphology from heavily faceted “slate-like” features to monolayer steps was observed as the growth temperature was increased. The “slate-like” surface morphology produced low intensity cross-streaks in symmetric ( 10 1 - 0 ) reciprocal space maps, tilted about 18° away from the ( 10 1 - 0 ) crystal truncation rod. The orientation of these diffuse streaks corresponds to the physical alignment of the slates with respect to the substrate surface normal. X-ray line scans and defect-selective reciprocal space mapping confirmed that these low intensity streaks are solely dependent on this peculiar surface structure produced at low MOCVD growth temperatures and unrelated to basal plane stacking faults or other extended defects. All observations confirm that high quality III-nitride epitaxial structures on m-plane AlN substrates are attainable with controllable MOCVD growth processes, as demanded for future high performing AlN-based non-polar devices.
