Broadband, High-Frequency Permittivity Characterization for Epitaxial Ba1−xSrxTiO3 Composition-Spread Thin Films

التفاصيل البيبلوغرافية
العنوان: Broadband, High-Frequency Permittivity Characterization for Epitaxial Ba1−xSrxTiO3 Composition-Spread Thin Films
المؤلفون: Nathan D. Orloff, Eric J. Marksz, Justin Pearson, Ichiro Takeuchi, Christian J. Long, Naila Al Hasan, Aaron M. Hagerstrom, James C. Booth, Jasper Drisko, Xiaohang Zhang
المصدر: Physical Review Applied. 15
بيانات النشر: American Physical Society (APS), 2021.
سنة النشر: 2021
مصطلحات موضوعية: Permittivity, Compact space, Materials science, Condensed matter physics, Electric field, Relaxation (NMR), General Physics and Astronomy, Dielectric, Thin film, Epitaxy, Dielectric spectroscopy
الوصف: Next-generation millimeter-wave $(g30\phantom{\rule{0.1em}{0ex}}\mathrm{GHz})$ telecommunications electronics must be compact, energy efficient, and have good thermal management. Tunable materials may play a role in meeting these requirements for millimeter-wave front-end devices, but there are few models or even measurements of tunable dielectrics at these frequencies. Here, we report on the adaptation and development of high-frequency dielectric spectroscopy techniques for composition-spread thin films from 100 MHz to 110 GHz. Our comprehensive technique sequentially probes the composition, frequency, and electric field dependence of the complex permittivity in a combinatorial thin film library, which provides a platform to rapidly explore functional materials for emerging telecommunications electronics. This is achieved by modifying existing on-wafer transmission line permittivity measurement techniques to obtain a compact set of test devices that can be patterned to extract the complex permittivity in multiple regions of a thin film. We demonstrate this technique by applying it to composition-spread ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{Ti}\mathrm{O}}_{3}$ thin films spanning compositions from $x=0$ to $x=1.$ The systematic approach to materials growth inherent in combinatorial synthesis allows for a comprehensive picture of the ${\mathrm{Ba}}_{1\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{Ti}\mathrm{O}}_{3}$ system. Our continuous, quantitative measurements provide an encompassing view of the composition- and voltage-dependent trends in the room temperature dielectric properties at millimeter-wave frequencies---from strong, few-picosecond relaxations to no relaxation, and from large relative tunability (${n}_{r}g50\mathrm{%}$ at $75\phantom{\rule{0.1em}{0ex}}\mathrm{k}{\mathrm{V}}_{}\mathrm{c}{\mathrm{m}}^{\ensuremath{-}1}$) to zero tunability. Our work underscores both the utility of our technique, and the need to discover lower-loss, highly tunable electronic materials for next-generation telecommunications.
تدمد: 2331-7019
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b8823b58e3d17c06bcbadf77ae8d2b1b
https://doi.org/10.1103/physrevapplied.15.064061
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........b8823b58e3d17c06bcbadf77ae8d2b1b
قاعدة البيانات: OpenAIRE