An Investigation of Electrothermal Characteristics on Low-Temperature Polycrystalline-Silicon Thin-Film Transistors

التفاصيل البيبلوغرافية
العنوان: An Investigation of Electrothermal Characteristics on Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
المؤلفون: Chen-Hsin Lien, Jam-Wem Lee, Ya-Li Tai
المصدر: IEEE Transactions on Device and Materials Reliability. 10:96-99
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2010.
سنة النشر: 2010
مصطلحات موضوعية: Materials science, Silicon, business.industry, Low-temperature polycrystalline silicon, Semiconductor device modeling, Silicon on insulator, chemistry.chemical_element, engineering.material, Electronic, Optical and Magnetic Materials, Polycrystalline silicon, chemistry, Thin-film transistor, MOSFET, engineering, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, Thin film, Safety, Risk, Reliability and Quality, business
الوصف: In this paper, theoretical and experimental analyses have been performed to explore the electrothermal characteristics in low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs). A theoretical simulation reveals that electrothermal effects strongly influence the performance of LTPS TFTs, particularly under high-current conditions. Measurements show that, under extremely high currents, LTPS devices demonstrate an open-circuit behavior, while the behavior of devices based on single-crystalline silicon films using an SOI CMOS process results in a short-circuit model. In summary, both the simulation and measurements indicate that grain boundaries will degrade the electrothermal properties of the LTPS thin film and suppress reliability in TFT design.
تدمد: 1558-2574
1530-4388
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bae0cec7b68c9d82dfa6bf1927002e0b
https://doi.org/10.1109/tdmr.2009.2035105
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........bae0cec7b68c9d82dfa6bf1927002e0b
قاعدة البيانات: OpenAIRE