Pt diffused diodes (p + n n + junctions) were manufactured on 75 μm n-type epitaxial Si wafers. Gettering of Pt by 3.1 MeV He-implantation induced defects was performed. The fleunce was 10 17 He/cm 2 . A post thermal annealing at 1050°C for 2 h gave rise to formation of a 0.2 μm cavity layer at the predicted projected range ( R p ) as measured by XTEM (cross sectional transmission electron microscopy). SIMS (secondary ion mass spectroscopy) crater profiles of both B and Pt revealed that the cavities are efficient sites to trap Pt atoms.
