An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors
| العنوان: | An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors |
|---|---|
| المؤلفون: | P. Mirdha, Jun Kondo, Faquir C. Jain, Barath Parthasarathy, P.-Y. Chan, Evan Heller |
| المصدر: | Journal of Electronic Materials. 47:1371-1382 |
| بيانات النشر: | Springer Science and Business Media LLC, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Materials science, Silicon, Superlattice, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Capacitance, law.invention, law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Electrical and Electronic Engineering, 010302 applied physics, Condensed matter physics, business.industry, Transistor, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Non-volatile memory, Semiconductor, chemistry, Quantum dot, Density of states, Optoelectronics, 0210 nano-technology, business |
| الوصف: | Site-specific self-assembled colloidal quantum dots (QDs) will deposit in two layers only on p-type substrate to form a QD superlattice (QDSL). The QDSL structure has been integrated into the floating gate of a nonvolatile memory component and has demonstrated promising results in multi-bit storage, ease of fabrication, and memory retention. Additionally, multi-valued logic devices and circuits have been created by using QDSL structures which demonstrated ternary and quaternary logic. With increasing use of site-specific self-assembled QDSLs, fundamental understanding of silicon and germanium QDSL charge storage capability, self-assembly on specific surfaces, uniform distribution, and mini-band formation has to be understood for successful implementation in devices. In this work, we investigate the differences in electron charge storage by building metal-oxide semiconductor (MOS) capacitors and using capacitance and voltage measurements to quantify the storage capabilities. The self-assembly process and distribution density of the QDSL is done by obtaining atomic force microscopy (AFM) results on line samples. Additionally, we present a summary of the theoretical density of states in each of the QDSLs. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::bdfce5a3cff3f490c37930e5f1b12e13 https://doi.org/10.1007/s11664-017-5951-5 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........bdfce5a3cff3f490c37930e5f1b12e13 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
|---|