Modeling of current—voltage characteristics for double‐gate a‐IGZO TFTs and its application to AMLCDs
| العنوان: | Modeling of current—voltage characteristics for double‐gate a‐IGZO TFTs and its application to AMLCDs |
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| المؤلفون: | Gwanghyeon Baek, Jerzy Kanicki |
| المصدر: | Journal of the Society for Information Display. 20:237-244 |
| بيانات النشر: | Wiley, 2012. |
| سنة النشر: | 2012 |
| مصطلحات موضوعية: | Materials science, business.industry, Electrical engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Threshold voltage, Saturation voltage, Current voltage, Thin-film transistor, Subthreshold swing, Electrode, Optoelectronics, Double gate, Electrical and Electronic Engineering, Homojunction, business |
| الوصف: | — The equations for the transfer characteristics, subthreshold swing, and saturation voltage of double-gate (DG) a-IGZO TFTs, when the top- and bottom-gate electrodes are connected together (synchronized), were developed. From these equations, it is found thatsynchronized DG a-IGZO TFTs can be considered as conventional TFTs with a modified gate capacitance and threshold voltage. The developed models were compared with the top or bottom gate only bias conditions. The validity of the models is discussed by using the extracted TFT parameters for DG coplanar homojunction TFTs. Lastly, the new pixel circuit and layout based on a synchronized DG a-IGZO TFT is introduced. |
| تدمد: | 1938-3657 1071-0922 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::bee1844aeb5725b4acbb403223b559f1 https://doi.org/10.1889/jsid20.5.237 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........bee1844aeb5725b4acbb403223b559f1 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19383657 10710922 |
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