Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth
| العنوان: | Low-temperature fabrication of p/sup +/-n diodes with 300-AA junction depth |
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| المؤلفون: | P.G. Carey, A. M. McCarthy, Kurt H. Weiner, T. W. Sigmon |
| المصدر: | IEEE Electron Device Letters. 13:369-371 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 1992. |
| سنة النشر: | 1992 |
| مصطلحات موضوعية: | Materials science, Gas laser, business.industry, Doping, Analytical chemistry, Biasing, Semiconductor device, Electronic, Optical and Magnetic Materials, Gas immersion laser doping, law.invention, Reverse leakage current, law, Optoelectronics, Electrical and Electronic Engineering, p–n junction, business, Diode |
| الوصف: | Gas immersion laser doping (GILD) was used to fabricate p/sup +/-n diodes with 300-AA junction depth. These diodes exhibit ideality factors of 1.01-1.05 over seven decades of current, reverse leakage current densities > |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c0284df1bd4cc269758cd8a825c5d583 https://doi.org/10.1109/55.192758 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........c0284df1bd4cc269758cd8a825c5d583 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
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