Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering
| العنوان: | Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering |
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| المؤلفون: | Sophie Bernasconi, David Cooper, Jean-Francois Damlencourt, Yves Morand, Fabrice Nemouchi, Sylvie Favier, Jean-Michel Hartmann, Veronique Carron |
| المصدر: | ECS Transactions. 58:239-248 |
| بيانات النشر: | The Electrochemical Society, 2013. |
| سنة النشر: | 2013 |
| مصطلحات موضوعية: | Engineering, Engineering drawing, Strain engineering, business.industry, business, Engineering physics |
| الوصف: | Strained SiGe and SiC sources and drains are planned to be used in sub-28nm FDSOI devices in order to improve the carriers mobility. Consequently, silicide-induced relaxation of strained epitaxial layers is a key issue to address in order to fully benefit from the desired effects of strain engineering techniques. This paper deal with the impact of the silicidation process conditions on the strain of Si1-xGex:B layers (x=0.3 and 0.45) and SiC:P with [C]≤1,5%. We show that the strain of epitaxial layers is not affected by the silicidation in the case of Si0.7Ge0.3 and SiC, while a strong degradation of strain occurs with Si0.55Ge0.45. The strain evolution in the channel of a device at various stages of the silicidation process has been followed using dark field electron holography. We show that process parameters can be tuned in order to minimize the reduction of strain induced by the silicidation |
| تدمد: | 1938-6737 1938-5862 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::c04414bbd663a5945ccb202753ab900d https://doi.org/10.1149/05809.0239ecst |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........c04414bbd663a5945ccb202753ab900d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
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