Tungsten has been the material of choice for contact and gate metallization, and continues to be used in FINFET architectures. In this work, we developed a low resistivity conformal Fluorine free tungsten film that can nucleate the WF6 based ALD/CVD W growth while blocking the fluorine diffusion from the bulk W fill material. It provides significant benefit in integration performance enhancement compare to common processes used for tungsten metallization.
